Title :
Analyses of NDRO plated wire memory cell and plane configurations
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, NJ
fDate :
9/1/1968 12:00:00 AM
Keywords :
NDRO memories; Plated-wire memories; Anisotropic magnetoresistance; Capacitance; Costs; Gold; Grain size; Inductance; Magnetic films; Signal design; Signal to noise ratio; Wire;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1968.1066248
