DocumentCode :
1037632
Title :
Negative-resistance diode power amplification
Author :
Hines, M.E.
Author_Institution :
Microwave Associates, Inc., Burlington, Mass.
Volume :
17
Issue :
1
fYear :
1970
fDate :
1/1/1970 12:00:00 AM
Firstpage :
1
Lastpage :
8
Abstract :
An analysis is presented for the nonlinear behavior of power amplifiers utilizing negative-resistance diodes in a reflection circuit. The analysis applies to both stable and locked-oscillator modes of operation. Special emphasis is given to a simple model involving a cubic nonlinearity in the 
relationship, and to the idealized LSA device in an amplification mode.
relationship, and to the idealized LSA device in an amplification mode.Keywords :
Circuits; Gallium arsenide; Gunn devices; Microwave amplifiers; Microwave devices; Microwave oscillators; Power amplifiers; Reflection; Semiconductor diodes; Varactors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.16916
Filename :
1476100
Link To Document :
