DocumentCode
1037656
Title
Pulsed resistance bridge for studies of semiconductor contacts
Author
George, E.V. ; Bekefi, G.
Author_Institution
Massachusetts Institute of Technology, Cambridge, Mass.
Volume
17
Issue
1
fYear
1970
fDate
1/1/1970 12:00:00 AM
Firstpage
27
Lastpage
30
Abstract
A pulsed (∼3-5 µs pulse width; 30-200 Hz repetition rate) resistance bridge that graphically displays the resistance voltage characteristics of semiconductor samples is described. Using this instrument it is possible to detect changes in the resistance 
of the semiconductor sample of approximately 0.1 percent. With this sensitivity one can determine the quality of the contacts that are applied to the semiconductor. We illustrate the operation of the pulsed bridge, including a comparison between "good" (ohmic) and "poor" (nonohmic) contacts, by using indium antimonide at 77°K as the semiconductor.
of the semiconductor sample of approximately 0.1 percent. With this sensitivity one can determine the quality of the contacts that are applied to the semiconductor. We illustrate the operation of the pulsed bridge, including a comparison between "good" (ohmic) and "poor" (nonohmic) contacts, by using indium antimonide at 77°K as the semiconductor.Keywords
Bridge circuits; Contact resistance; Displays; Electrical resistance measurement; Instruments; Pulse measurements; Pulse transformers; Semiconductor device noise; Space vector pulse width modulation; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.16919
Filename
1476103
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