DocumentCode :
1037656
Title :
Pulsed resistance bridge for studies of semiconductor contacts
Author :
George, E.V. ; Bekefi, G.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, Mass.
Volume :
17
Issue :
1
fYear :
1970
fDate :
1/1/1970 12:00:00 AM
Firstpage :
27
Lastpage :
30
Abstract :
A pulsed (∼3-5 µs pulse width; 30-200 Hz repetition rate) resistance bridge that graphically displays the resistance voltage characteristics of semiconductor samples is described. Using this instrument it is possible to detect changes in the resistance 
of the semiconductor sample of approximately 0.1 percent. With this sensitivity one can determine the quality of the contacts that are applied to the semiconductor. We illustrate the operation of the pulsed bridge, including a comparison between "good" (ohmic) and "poor" (nonohmic) contacts, by using indium antimonide at 77°K as the semiconductor.
of the semiconductor sample of approximately 0.1 percent. With this sensitivity one can determine the quality of the contacts that are applied to the semiconductor. We illustrate the operation of the pulsed bridge, including a comparison between "good" (ohmic) and "poor" (nonohmic) contacts, by using indium antimonide at 77°K as the semiconductor.Keywords :
Bridge circuits; Contact resistance; Displays; Electrical resistance measurement; Instruments; Pulse measurements; Pulse transformers; Semiconductor device noise; Space vector pulse width modulation; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.16919
Filename :
1476103
Link To Document :
