Title :
New tungsten silicide thin-film resistor technology applied to GaAs integrated circuits
Author :
Allan, D.A. ; Gilbert, M.J. ; O´Sullivan, P.J.
Author_Institution :
British Telecom Research Laboratories, Compound Semiconductor Microelectronics Section, Ipswich, UK
Abstract :
Tungsten silicide resistors in the range 50¿300 ¿ sheet resistance have been deposited on GaAs by RF sputtering and patterned by etching in an SF6 plasma. High-temperature stability has been demonstrated and a change in resistance of less than 01% after lOOOh at 125°C achieved with passivated resistors.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; metallisation; sputter deposition; sputter etching; thin film resistors; tungsten compounds; 125 degC; 50 to 300 ohm; GaAs; RF sputtering; SF6 plasma; WSix technology; etching; high temperature stability; passivated resistors; tungsten silicide thin-film resistor technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870847
