• DocumentCode
    1037750
  • Title

    Uniformity of threshold voltage for MESFETs fabricated on VGF GaAs substrates

  • Author

    Reynolds, C.L. ; Gibson, W.C. ; Clemans, J.E.

  • Author_Institution
    AT&T Bell Laboratories, Reading, USA
  • Volume
    23
  • Issue
    23
  • fYear
    1987
  • Firstpage
    1222
  • Lastpage
    1223
  • Abstract
    Improved uniformity of threshold voltage is shown for MESFETs fabricated on GaAs substrates grown by a novel vertical gradient freeze technique when compared to devices fabricated on LEC GaAs substrates. The improved uniformity is most likely related to the decreased dislocation density and reduced impurity clustering in the VGF material.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; crystal growth from melt; gallium arsenide; semiconductor growth; GaAs substrates; LEC; MESFETs; improved uniformity; liquid encapsulated Czochralski crystals; threshold voltage; vertical gradient freeze technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870851
  • Filename
    4259091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037750