Title :
Uniformity of threshold voltage for MESFETs fabricated on VGF GaAs substrates
Author :
Reynolds, C.L. ; Gibson, W.C. ; Clemans, J.E.
Author_Institution :
AT&T Bell Laboratories, Reading, USA
Abstract :
Improved uniformity of threshold voltage is shown for MESFETs fabricated on GaAs substrates grown by a novel vertical gradient freeze technique when compared to devices fabricated on LEC GaAs substrates. The improved uniformity is most likely related to the decreased dislocation density and reduced impurity clustering in the VGF material.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; crystal growth from melt; gallium arsenide; semiconductor growth; GaAs substrates; LEC; MESFETs; improved uniformity; liquid encapsulated Czochralski crystals; threshold voltage; vertical gradient freeze technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870851
