• DocumentCode
    1037758
  • Title

    Photoelectric fields in semiconductors under strong excitation

  • Author

    Berry, W.B. ; Yu, H.Y.

  • Volume
    17
  • Issue
    1
  • fYear
    1970
  • fDate
    1/1/1970 12:00:00 AM
  • Firstpage
    86
  • Lastpage
    87
  • Abstract
    Photoelectric fields induced in semiconductors with nonuniform impurity profiles cancel the built-in electric field. In the case of strong photoexcitation, the maximum open-circuit voltage approaches the internal built-in potential difference due to the impurity gradient between the ohmic contact probes on the semiconductor slice.
  • Keywords
    Electrons; Frequency; Insertion loss; Plasma temperature; Radiative recombination; Semiconductor impurities; Spontaneous emission; Switches; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.16930
  • Filename
    1476114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037758