Dynamic switching process of sandwich-structured MR elements

Author

Yoo, H.Y. ; Pohm, A.V. ; Hur, J.H. ; Kenkare, S.W. ; Comstock, C.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA

Volume

25

Issue

5

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

4269

Lastpage

4271

Abstract

The dynamic behavior of sandwich-structured magnetoresistive (MR) memory elements is studied analytically by solving Gilbert´s equation together with the one-dimensional micromagnetic torque equation. The typical element is 2 μm×20 μm and consists of two 150-Å thick magnetic layers separated by a 50-Å thick nonmagnetic layer. The easy axis is along the short dimension of the element. The theoretical study shows that wall nucleation is present when the switching is driven by a field applied in the easy-axis direction, whereas switching by a field in the hard-axis direction is accomplished by coherent rotation. The switching speed predicted by this one-dimensional model is in the nanosecond range and increases linearly with the external fields

Keywords

magnetic film stores; magnetoresistance; 150 A; 2 micron; 20 micron; 50 A; Gilbert´s equation; coherent rotation; dynamic behavior; dynamic switching process; easy-axis direction; hard-axis direction; magnetic layers; magnetoresistive memory elements; nonmagnetic layer; one-dimensional micromagnetic torque equation; one-dimensional model; sandwich-structured MR elements; switching speed; wall nucleation; Anisotropic magnetoresistance; Demagnetization; Equations; Geometry; High definition video; Magnetic anisotropy; Magnetic field measurement; Magnetic flux; Magnetization; Perpendicular magnetic anisotropy;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.42591

Filename

42591