Highly Strained 1.22-μ m InGaAs Lasers Grown by MOVPE

Author

Chen, W.C. ; Su, Y.K. ; Chuang, R.W. ; Yu, H.C. ; Tsai, M.C. ; Cheng, K.Y. ; Horng, J.B. ; Hu, C. ; Tsau, Seth

Author_Institution

Nat. Cheng Kung Univ., Tainan

Volume

20

Issue

4

fYear

2008

Firstpage

264

Lastpage

266

Abstract

In this work, the highly strained In_0.39Ga_0.61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 mum under continuous-wave conditions, whereas the threshold current density (J_th) and transparency current density (J_tr) were 140 and 37.2 A/cm², respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 mum. The characteristic temperature (T_o) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

Keywords

III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; transparency; vapour phase epitaxial growth; In_0.39Ga_0.61As-GaAs; continuous-wave conditions; highly strained lasers; metal-organic vapor phase epitaxy; temperature stability; threshold current density; transparency current density; wavelength 1.22 mum; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical materials; Quantum dot lasers; Semiconductor materials; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; InGaAs; lasers; metal–organic vapor phase epitaxy (MOVPE); photoluminescence (PL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.913745

Filename

4432664