DocumentCode :
1037885
Title :
2.2 GHz all-n-p-n second-generation controlled conveyor in pseudoclass AB using 0.8-μm BiCMOS technology
Author :
Seguin, Fabrice ; Godara, Balwant ; Alicalapa, Frederic ; Fabre, Alain
Author_Institution :
Dept. of Electron., ENST Bretagne Technopole Brest-Iroise, France
Volume :
51
Issue :
7
fYear :
2004
fDate :
7/1/2004 12:00:00 AM
Firstpage :
369
Lastpage :
373
Abstract :
A new second-generation controlled current conveyor (CCCII), implemented using a 0.8-μm Si-BiCMOS process, and operating in pseudoclass AB, is presented. It uses only n-p-n transistors to convey the signal, and CMOS transistors to bias the circuit. The expressions for the intrinsic resistance RX and class of operation are derived. The performance of the circuit in voltage and current follower modes is described. Its electrical characteristics (voltage and current transfers, parasitic impedances) are compared with some other recent CCCII implementations. At a bias current of 550 μA, and supplied under ±2.2 V, the conveyor exhibits RX value as low as 2.2 Ω. Passbands of dc to 2.2 GHz are exhibited for both voltage and current transfers.
Keywords :
BiCMOS integrated circuits; current conveyors; current-mode circuits; electric resistance; heterojunction bipolar transistors; impedance convertors; 0 to 2.2 GHz; 0.8 micron; 550 muA; BiCMOS technology; CMOS transistors; current follower; current transfers; electrical characteristics; intrinsic impedance; intrinsic resistance; n-p-n transistors; parasitic impedances; pseudoclass AB; second-generation controlled current conveyor; voltage follower; voltage transfers; BiCMOS integrated circuits; CMOS technology; Electric resistance; Electric variables; Electric variables control; Frequency; Impedance; Passband; Silicon; Voltage control; BiCMOS; CCCII; Si; current follower; intrinsic impedance; pseudoclass AB; second-generation controlled current conveyor; silicon; voltage follower;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2004.831393
Filename :
1315887
Link To Document :
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