Title :
Extensions of the small-signal theory of negative resistance in gallium arsenide
fDate :
2/1/1970 12:00:00 AM
Abstract :
The small-signal model for the Gunn effect proposed by Englemann and Quate is revised to include the effects of average mobility of the two-valley system in the expressions for carrier velocity as a function of electric field. The dispersion relation is then rederived, and computed results consistent with experimental observations are shown.
Keywords :
Boron; Capacitance measurement; Capacitance-voltage characteristics; Conductivity; Diodes; Gallium arsenide; Gold; Silicon; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.16948
