Title :
Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas
Author :
Henry, Leanne ; Granjoux, P.
Author_Institution :
CNET Lannion B, LAB/ICM/TOH, Lannion, France
Abstract :
A new process for RIE of III¿V compound semiconductors using mixtures of CH4, Ar and H2 as the etching gas is presented. This process can be successfully applied to most III-V materials used in micro-optoelectronic technology
Keywords :
III-V semiconductors; integrated circuit technology; integrated optoelectronics; sputter etching; III-V compound semiconductors; MORIE; RIE; etching gas; integration of optoelectronic devices; metal organic reactive ion etching; methane Ar-H2 etching gas mixture; micro-optoelectronic technology; reactive ion etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870870
