• DocumentCode
    1037983
  • Title

    Novel fabrication method of quarter-wave-shifted gratings using ECR-CVD SiNx films

  • Author

    Sugimoto, Hiroshi ; Abe, Y. ; Matsui, Takashi ; Ogata, Hiroaki

  • Author_Institution
    Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan
  • Volume
    23
  • Issue
    24
  • fYear
    1987
  • Firstpage
    1260
  • Abstract
    Quarter-wave-shifted gratings were fabricated by novel methods using ECR-CVD SiN, films. SiNx films deposited on photoresist and grooves have a higher etching rate than those deposited on the flat substrate. We made good use of this difference to fabricate the quarter-wave-shifted gratings with a 240 nm period, about 150nm depth and narrow transient regions.
  • Keywords
    diffraction gratings; distributed feedback lasers; optical communication equipment; optical waveguides; semiconductor junction lasers; silicon compounds; 150 nm; 240 nm; ECR-CVD SiNx films; SiNx films; fabrication method; holography; long haul fibre communications; narrow transient regions; quarter-wave-shifted gratings; single mode,lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870875
  • Filename
    4259116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037983