DocumentCode :
1037983
Title :
Novel fabrication method of quarter-wave-shifted gratings using ECR-CVD SiNx films
Author :
Sugimoto, Hiroshi ; Abe, Y. ; Matsui, Takashi ; Ogata, Hiroaki
Author_Institution :
Mitsubishi Electric Corporation, Central Research Laboratory, Amagasaki, Japan
Volume :
23
Issue :
24
fYear :
1987
Firstpage :
1260
Abstract :
Quarter-wave-shifted gratings were fabricated by novel methods using ECR-CVD SiN, films. SiNx films deposited on photoresist and grooves have a higher etching rate than those deposited on the flat substrate. We made good use of this difference to fabricate the quarter-wave-shifted gratings with a 240 nm period, about 150nm depth and narrow transient regions.
Keywords :
diffraction gratings; distributed feedback lasers; optical communication equipment; optical waveguides; semiconductor junction lasers; silicon compounds; 150 nm; 240 nm; ECR-CVD SiNx films; SiNx films; fabrication method; holography; long haul fibre communications; narrow transient regions; quarter-wave-shifted gratings; single mode,lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870875
Filename :
4259116
Link To Document :
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