DocumentCode :
1038002
Title :
Appearance of a Tunneling Spectrum Peak by Electrical Breakdown of Tunneling Junction
Author :
Horikiri, Kouhei ; Shiiki, Kazuo
Author_Institution :
Dept. of Appl. Phys. & Physico-Inf., Keio Univ., Yokohama
Volume :
44
Issue :
11
fYear :
2008
Firstpage :
2589
Lastpage :
2591
Abstract :
Inelastic electron tunneling spectra of metal/AlO x/metal junctions were measured at 77 K. For as-made samples up to 0.3 V, the only observable peak occurred near 0.04 V. After electrical breakdown induced both by a ramped voltage stress and by a constant voltage stress, a peak appeared near 0.09 V. It is thought that a conduction level, which is about 0.09 eV higher than the Fermi level, was created in AlOx by the electrical breakdown. The breakdown is not thought to be due to a simple short circuit caused by a pinhole or the like.
Keywords :
electric breakdown; tunnelling; tunnelling spectroscopy; Fermi level; constant voltage stress; electrical breakdown; inelastic electron tunneling spectra; ion-beam sputtering; ramped voltage stress; temperature 77 K; thermal oxidation; tunneling junction; tunneling spectroscopy; tunneling spectrum peak; AlOx; electrical breakdown; ion-beam sputtering; thermal oxidation; tunneling junction; tunneling spectroscopy;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2008.2003041
Filename :
4717507
Link To Document :
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