Title :
Room-temperature CW operation of MBE-grown GaInAs/AlInAs mow lasers in 1.5μm range
Author :
Matsushima, Y. ; Utaka, K. ; Sakai, Kenji ; Takeuchi, O.
Author_Institution :
KDD Meguro R&D Laboratories, Tokyo, Japan
Abstract :
We report the first successful room-temperature CW operation of GaInAs/AlInAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; semiconductor junction lasers; 1.57 micron; 12 micron; 530 mA; 600 micron; GaInAs-AlInAs lasers; MBE; MQW lasers; SiN film; SiN-defined stripe laser; cavity; emitting wavelength; injection lasers; molecular beam epitaxy; multiquantum-well; room-temperature CW operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870882
