Title :
Near-ambient-temperature bipolar transistor in cadmium mercury telluride
Author :
Ashley, T. ; Elliott, C.T. ; White, Amanda M. ; Crimes, G.J. ; Harker, A.T.
Author_Institution :
Royal Signals & Radar Establishment, Great Malvern, UK
Abstract :
We describe an npn cadmium mercury telluride transistor made from a close-packed array of lateral collection diodes. At 263 K and a collector current of 1 mA the hfe was ¿20. A reverse base-emitter bias is required to turn off the collector current, owing to thermal generation of electrons in the base.
Keywords :
II-VI semiconductors; bipolar transistors; cadmium compounds; mercury compounds; 1 mA; 263 K; CMT; CdHgTe; bipolar transistor; characteristics; close-packed array of lateral collection diodes; collector current; npn; photodiode array; reverse base-emitter bias; thermal generation of electrons;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870887
