• DocumentCode
    1038110
  • Title

    Near-ambient-temperature bipolar transistor in cadmium mercury telluride

  • Author

    Ashley, T. ; Elliott, C.T. ; White, Amanda M. ; Crimes, G.J. ; Harker, A.T.

  • Author_Institution
    Royal Signals & Radar Establishment, Great Malvern, UK
  • Volume
    23
  • Issue
    24
  • fYear
    1987
  • Firstpage
    1280
  • Lastpage
    1281
  • Abstract
    We describe an npn cadmium mercury telluride transistor made from a close-packed array of lateral collection diodes. At 263 K and a collector current of 1 mA the hfe was ¿20. A reverse base-emitter bias is required to turn off the collector current, owing to thermal generation of electrons in the base.
  • Keywords
    II-VI semiconductors; bipolar transistors; cadmium compounds; mercury compounds; 1 mA; 263 K; CMT; CdHgTe; bipolar transistor; characteristics; close-packed array of lateral collection diodes; collector current; npn; photodiode array; reverse base-emitter bias; thermal generation of electrons;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870887
  • Filename
    4259128
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038110