• DocumentCode
    103816
  • Title

    Pulsed Gating With Balanced InGaAs/InP Single Photon Avalanche Diodes

  • Author

    Lu, Zhi ; Sun, Wen ; Campbell, Joe C. ; Jiang, Xinyang ; Itzler, Mark A.

  • Author_Institution
    Electrical and Computer Engineering Department, University of Virginia, Charlottesville, VA, USA
  • Volume
    49
  • Issue
    5
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    485
  • Lastpage
    490
  • Abstract
    We demonstrate balanced InGaAs/InP single photon avalanche diodes operated in gated mode for a data transmission rate of up to 20 MHz. The common-mode signal cancellation realized with the balanced configuration enabled detection of small avalanche pulses. For a laser repletion rate of 20 MHz at 240 K, the dark count probability for a photon detection efficiency of 13% is 1.9\\times 10^{-5} . The afterpulse probability is 0.3% for a 2 ns pulse width, hold-off time of 20 ns, and 10% PDE, at 240 K.
  • Keywords
    Avalanche photodiodes; Indium gallium arsenide; Indium phosphide; Noise cancellation; Optical receivers; Optoelectronic and photonic sensors; Avalanche photodiodes; RF signals; infrared detectors; noise cancellation; optical receivers; optoelectronic and photonic sensors; signal to noise ratio;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2013.2253762
  • Filename
    6484869