DocumentCode
103816
Title
Pulsed Gating With Balanced InGaAs/InP Single Photon Avalanche Diodes
Author
Lu, Zhi ; Sun, Wen ; Campbell, Joe C. ; Jiang, Xinyang ; Itzler, Mark A.
Author_Institution
Electrical and Computer Engineering Department, University of Virginia, Charlottesville, VA, USA
Volume
49
Issue
5
fYear
2013
fDate
May-13
Firstpage
485
Lastpage
490
Abstract
We demonstrate balanced InGaAs/InP single photon avalanche diodes operated in gated mode for a data transmission rate of up to 20 MHz. The common-mode signal cancellation realized with the balanced configuration enabled detection of small avalanche pulses. For a laser repletion rate of 20 MHz at 240 K, the dark count probability for a photon detection efficiency of 13% is
. The afterpulse probability is 0.3% for a 2 ns pulse width, hold-off time of 20 ns, and 10% PDE, at 240 K.
Keywords
Avalanche photodiodes; Indium gallium arsenide; Indium phosphide; Noise cancellation; Optical receivers; Optoelectronic and photonic sensors; Avalanche photodiodes; RF signals; infrared detectors; noise cancellation; optical receivers; optoelectronic and photonic sensors; signal to noise ratio;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2013.2253762
Filename
6484869
Link To Document