Title :
A generalized analytical theory of the response of a photoconductor
Author :
Said, M.Sameh ; Taylor, M. Gene
Author_Institution :
University of Pennsylvania, Philadelphia, Pa.
fDate :
4/1/1970 12:00:00 AM
Abstract :
In this work a theoretical model is derived for predicting the response of a photoconductor. This model takes into account direct recombination, surface recombination, recombination through traps (for the two limiting cases of high- and low-trap effect), Auger-type processes, and diffusion effect. Complete solutions are obtained for both steady-state and transient conditions for these various cases.
Keywords :
Artificial intelligence; Charge carrier lifetime; Charge carrier processes; Electron traps; Indium; Photoconductivity; Radiative recombination; Silicon; Spontaneous emission; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.16977
