Title :
1 THz-bandwidth proper for high-speed devices and integrated circuits
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
We describe an external electro-optic technique for characterising high-speed electrical signals in two-dimensional electrode structures of devices and integrated circuits fabricated on any substrate material. A temporal resolution of less than 300 fs, corresponding to a bandwidth in excess of 1 THz has been achieved.
Keywords :
digital integrated circuits; electro-optical effects; integrated circuit testing; probes; semiconductor device testing; 1 THz; 300 fs; digital IC testing; external electro-optic technique; high-speed devices; high-speed electrical signals; integrated circuits; prober; temporal resolution; two-dimensional electrode structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870905