• DocumentCode
    1038331
  • Title

    Selectively implanted buried oxide (SIBO) process for VLSI applications

  • Author

    Ratnam, P.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    23
  • Issue
    24
  • fYear
    1987
  • Firstpage
    1316
  • Lastpage
    1317
  • Abstract
    A novel process for achieving a thin (submicrometre-thick) monocrystalline silicon layer on an insulator (SOI) with a connection to the substrate at the edges of the insulator is presented. Results are obtained to prove the electrical connection of the SOI layer to the bulk silicon.
  • Keywords
    integrated circuit technology; ion implantation; semiconductor technology; SIBO; SOI; Si monocrystalline film; VLSI; edge connection to substrate; localised SOI; selectively implanted buried oxide; submicron film;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870910
  • Filename
    4259151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038331