Title :
Growth and properties of an LiNbO3 film on sapphire with an LiNbO3 buffer layer
Author_Institution :
NTT, Electrical Communications Laboratories, Musashino, Japan
Abstract :
A lithium niobate (LiNbO3) epitaxial film has been grown by magnetron RF sputtering. It was grown on a sapphire substrate with a predeposited and annealed LiNbO3 buffer layer. The effects of a buffer layer on growth-film properties were studied by physical analysis, including X-ray diffraction, reflection high-energy electron diffraction and scanning electron microscopy.
Keywords :
X-ray diffraction examination of materials; epitaxial layers; integrated optics; lithium compounds; niobium compounds; optical waveguides; reflection high energy electron diffraction; sapphire; scanning electron microscopy; sputter deposition; sputtered coatings; substrates; vapour phase epitaxial growth; Al2O3 substrate; LiNbO3 films; RHEED; SEM; X-ray diffraction; annealed LiNbO3 buffer layer; epitaxial film; film growth; growth-film properties; magnetron RF sputtering; physical analysis; reflection high-energy electron diffraction; sapphire substrate; scanning electron microscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870914
