DocumentCode :
1038383
Title :
Characterization of avalanche diode TRAPATT oscillators
Author :
Evans, William J. ; Scharfetter, Donald L.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume :
17
Issue :
5
fYear :
1970
fDate :
5/1/1970 12:00:00 AM
Firstpage :
397
Lastpage :
404
Abstract :
The characteristics of a coaxial avalanche diode oscillator circuit are calculated and compared with experimental results. The circuit admittance, as seen at the diode terminals, is calculated in the frequency domain for "optimally tuned" experimental conditions. The impulse response function of the circuit, as obtained from the transformed admittance, is used to obtain time-evolution solutions of the avalanche diode circuit system. The impulse response is more general than the previously employed differential equation characterization of a lumped element equivalent circuit. The simulation presented of the high-efficiency mode of oscillation allowed no adjustable parameters and is in excellent agreement with experiment. The simulation verifies the original TRAPATT [1] explanation for the high-efficiency mode of oscillation.
Keywords :
Admittance; Circuit optimization; Circuit simulation; Coaxial components; Computer simulation; Differential equations; Diodes; Oscillators; Plasma measurements; Tuning;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.16995
Filename :
1476179
Link To Document :
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