Title :
Room-temperature continuous-wave operation of a 640 nm AlGaInP visible-light semiconductor laser
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Continuous-wave (CW) 640 nm operation at room temperature (20°C) has been achieved by a transverse-mode stabilised AlGaInP laser diode with an (Al0.15Ga0.85)0.5In0.5P quaternary active layer. The lasing wavelength is the shortest ever reported for room-temperature CW operation of semiconductor lasers. The laser structure was grown by metalorganic vapour-phase epitaxy. The threshold current (density) was 63 mA (4.2 kA/cm2).
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 20 C; 640 nm; AlGaInP laser diode; MOVPE; continuous-wave operation; laser structure; lasing wavelength; metal-organic vapor-phase epitaxy; operation at room temperature; quaternary active layer; room-temperature CW operation; threshold current; visible-light semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870918
