DocumentCode :
1038419
Title :
Multiplication in collector junctions of silicon n-p-n and p-n-p transistors
Author :
Moll, John L. ; Su, James L. ; Wang, A.C.
Author_Institution :
Fairchild Semiconductors, Mountain View, Calif.
Volume :
17
Issue :
5
fYear :
1970
fDate :
5/1/1970 12:00:00 AM
Firstpage :
420
Lastpage :
423
Abstract :
The values 1-1/ 
for both electrons and holes, where is the multiplication factor, have been calculated in three different silicon p-n junctions. The logarithmic plot of 1 - 1/ versus the normalized voltage 
is well approximated by a straight line for 0.1 > 1 -1/ > 0.005. This range corresponds to the useful range of α0 for most bipolar transistors. An empirical expression has been obtained for the ratio 
within this range.
for both electrons and holes, where is the multiplication factor, have been calculated in three different silicon p-n junctions. The logarithmic plot of 1 - 1/ versus the normalized voltage is well approximated by a straight line for 0.1 > 1 -1/ > 0.005. This range corresponds to the useful range of α within this range.Keywords :
Capacitance; Charge carrier processes; Germanium; Heterojunctions; Ionization; P-n junctions; PIN photodiodes; Semiconductor diodes; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.16999
Filename :
1476183
Link To Document :
