Title :
High-pressure thermal oxidation of gallium arsenide at 250°C
Author :
Bhat, K.N. ; Basu, N.
Author_Institution :
Indian Institute of Technology, Department of Electrical Engineering, Madras, India
Abstract :
It is shown that the native oxide of GaAs can be thermally grown easily at a temperature of 250°C using a high-pressure oxidation technique. The resulting oxide films are uniform, chemically stable and have a breakdown strength of 68 × 106V/cm and a bandgap energy greater than 6·5eV. The chemical composition of the oxide films is studied using X-ray photoelectron spectroscopy, and it is found to contain oxides of both gallium and arsenic.
Keywords :
III-V semiconductors; gallium arsenide; insulating thin films; oxidation; passivation; semiconductor technology; 2 atm; 250 C; 6.5 eV; GaAs oxidation technique; GaAs-GaAsO; GaAsO uniform films; X-ray photoelectron spectroscopy; XPS; bandgap energy; breakdown strength; chemical composition; chemically stable; high-pressure oxidation technique; native oxide; oxide films; passivation films; properties; thermal oxidation; thermal oxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870919
