DocumentCode
1038430
Title
High-pressure thermal oxidation of gallium arsenide at 250°C
Author
Bhat, K.N. ; Basu, N.
Author_Institution
Indian Institute of Technology, Department of Electrical Engineering, Madras, India
Volume
23
Issue
24
fYear
1987
Firstpage
1329
Lastpage
1330
Abstract
It is shown that the native oxide of GaAs can be thermally grown easily at a temperature of 250°C using a high-pressure oxidation technique. The resulting oxide films are uniform, chemically stable and have a breakdown strength of 68 × 106V/cm and a bandgap energy greater than 6·5eV. The chemical composition of the oxide films is studied using X-ray photoelectron spectroscopy, and it is found to contain oxides of both gallium and arsenic.
Keywords
III-V semiconductors; gallium arsenide; insulating thin films; oxidation; passivation; semiconductor technology; 2 atm; 250 C; 6.5 eV; GaAs oxidation technique; GaAs-GaAsO; GaAsO uniform films; X-ray photoelectron spectroscopy; XPS; bandgap energy; breakdown strength; chemical composition; chemically stable; high-pressure oxidation technique; native oxide; oxide films; passivation films; properties; thermal oxidation; thermal oxide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870919
Filename
4259160
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