Title :
AlGaAs/GaAs visible distributed feedback laser operating at 770 nm
Author :
Nakano, Yoshiaki ; Luo, Yun ; Tada, Kazuki
Author_Institution :
University of Tokyo, Department of Electronic Engineering, Tokyo, Japan
Abstract :
A visible-light AlGaAs/GaAs DFB laser with practical characteristics oscillating at 770 nm has been fabricated by using two-step liquid phase epitaxy for the first time. Threshold current of 90 mA measured at room temperature is satisfactorily low for its simple oxide stripe structure. The same DFB mode oscillation without mode hopping has been maintained in a considerably wide range of temperature. The results show a possibility of realising a high-performance DFB laser in the visible-wavaelength region.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; liquid phase epitaxial growth; semiconductor junction lasers; 770 nm; 90 mA; AlGaAs-GaAs; DFB laser; LPE; distributed feedback laser; room temperature; simple oxide stripe structure; two-step liquid phase epitaxy; visible-light; visible-wavelength region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870927
