Title :
Drift velocity saturation in MOS transistors
Author :
Baum, G. ; Beneking, H.
fDate :
6/1/1970 12:00:00 AM
Abstract :
It is shown that the drift velocity saturation of the current carriers in the channel of a MOSFET iS an important factor in the analysis of the electrical behavior of such devices. The theory presented here, which includes this effect, shows improved agreement with measured output characteristics.
Keywords :
Capacitance; Dielectric substrates; Doping; Electrodes; Electron mobility; MOSFET circuits; Neodymium; Poisson equations; Threshold voltage; Virtual colonoscopy;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17014
