• DocumentCode
    1038576
  • Title

    Hot electron degradation in the source of asymmetrical LDD structures

  • Author

    Doyle, B.S. ; Bourcerie, M. ; Leclaire, P. ; Boudou, A. ; Dars, P.

  • Author_Institution
    BULL Company, Les Clayes-sous-Bois, France
  • Volume
    23
  • Issue
    25
  • fYear
    1987
  • Firstpage
    1356
  • Lastpage
    1357
  • Abstract
    Hot carrier stressing has been carried out on LDD n-MOS transistors with gate overlap asymmetry, under conditions of strong source field (Vg > Vd). It is shown that, under these conditions, the device actually suffers hot carrier stressing at the source end of the transistor resulting directly from this high source field.
  • Keywords
    hot carriers; insulated gate field effect transistors; semiconductor device models; LDD; asymmetrical LDD structures; conditions of strong source field; gate overlap asymmetry; high source field; hot carrier stressing; hot electron degradation; n-MOS transistors; source end;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870936
  • Filename
    4259178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038576