Title :
Hot electron degradation in the source of asymmetrical LDD structures
Author :
Doyle, B.S. ; Bourcerie, M. ; Leclaire, P. ; Boudou, A. ; Dars, P.
Author_Institution :
BULL Company, Les Clayes-sous-Bois, France
Abstract :
Hot carrier stressing has been carried out on LDD n-MOS transistors with gate overlap asymmetry, under conditions of strong source field (Vg > Vd). It is shown that, under these conditions, the device actually suffers hot carrier stressing at the source end of the transistor resulting directly from this high source field.
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor device models; LDD; asymmetrical LDD structures; conditions of strong source field; gate overlap asymmetry; high source field; hot carrier stressing; hot electron degradation; n-MOS transistors; source end;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870936
