Correlation of emission and electrical properties of gallium arsenide transistor structures

Transistor structures were fabricated in si-doped solution, grown GaAs. The p-n junction used as anl emitter was formed during the growth of the epitaxial layer employing amphoteric Si doping. The collector junction was made by a planar sulphur diffusion. The behavior of the emitted light and the collector current as a function of the emitter base current are observed. The degradation in quantum efficiency and transistor alpha is noted to be due to the same diode current component. The degradation of alpha due to emitter crowding at high current levels is directly exhibited.