Title :
Comparison of phase modulation of GaAs/AlGaAs double heterostructures
Author :
Faist, J. ; Reinhart, F.K. ; Martin, Daniel
Author_Institution :
Ecole Polytechnique Federate de Lausanne, Institut de Micro et T Opto-electronique, Lausanne, Switzerland
Abstract :
The performance of double-heterostructure GaAs/AlxGa1¿xs phase modulators with different doping profiles are systematically compared. The largest phase modulation of l.75rad/V mm at a wavelength of 1.09¿m was obtained with an active layer doped at n=3 × 1017cm¿3. However, an intrinsic active layer gives the lowest characteristic modulation energy needed for high-frequency modulation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; optical modulation; optical waveguide components; phase modulation; 1.09 micron; GaAs-AlxGa1-xAs; III-V semiconductors; doping profiles; double heterostructures; high-frequency modulation; integrated optoelectronics; intrinsic active layer; phase modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870960
