• DocumentCode
    1038831
  • Title

    Silicon contact for area reduction of integrated circuits

  • Author

    Lin, H.C. ; Alexander, D.S.

  • Author_Institution
    University of Maryland, College Park, Md.
  • Volume
    17
  • Issue
    8
  • fYear
    1970
  • fDate
    8/1/1970 12:00:00 AM
  • Firstpage
    636
  • Lastpage
    636
  • Abstract
    The area of integrated circuits can be reduced by not allowing any space between the contact and the junction edge. Epitaxially grown silicon contacts have been used to achieve this goal.
  • Keywords
    Aluminum; Circuits; Conductivity; Contact resistance; Electron devices; MOSFETs; NASA; Schottky barriers; Silicon; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17043
  • Filename
    1476227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038831