DocumentCode :
1038909
Title :
Correlations between reverse recovery time and lifetime of p-n junction driven by a current ramp
Author :
Kao, Y.C. ; Davis, J.R.
Volume :
17
Issue :
9
fYear :
1970
fDate :
9/1/1970 12:00:00 AM
Firstpage :
652
Lastpage :
657
Abstract :
When a p-n junction is switched from the forward to the reverse direction by a current ramp, the reverse recovery time trr is found 1) either to be equal to the base lifetime τ if the ramp rate 
, 2) to be equal to 0.79τ if 
, or 3) to be equal to 0.7 τ if 
. These results afford correlations between τrr and τ and also provide the basis for a useful method for measuring τ.
, 2) to be equal to 0.79τ if , or 3) to be equal to 0.7 τ if . These results afford correlations between τKeywords :
Charge carrier processes; Current density; Gaussian processes; Helium; Integral equations; P-n junctions; Rectifiers; Region 7; Spontaneous emission; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17052
Filename :
1476236
Link To Document :
