DocumentCode :
1038931
Title :
High current-density beta diminution
Author :
Clark, Lowell E.
Author_Institution :
Central Research Laboratories, Phoenix, Ariz.
Volume :
17
Issue :
9
fYear :
1970
fDate :
9/1/1970 12:00:00 AM
Firstpage :
661
Lastpage :
666
Abstract :
This paper discusses methods for discriminating among various possible current-gain falloff mechanisms at high current densities. It is shown that although various mechanisms can predominate, well designed silicon transistors are usually limited by emitter efficiency. This is demonstrated experimentally for a variety of structures and values are given for the emitter saturation current density. Design rules for tradeoffs among current gain, basewidth, and emitter stripewidth are adumbrated.
Keywords :
Charge carrier density; Current density; Extrapolation; Germanium alloys; PIN photodiodes; Proximity effect; Radiative recombination; Rectifiers; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17054
Filename :
1476238
Link To Document :
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