DocumentCode
1038970
Title
Geometry of thyristor cathode shunts
Author
Chu, Chang K.
Author_Institution
Westinghouse Electric Corporation, Youngwood, Pa.
Volume
17
Issue
9
fYear
1970
fDate
9/1/1970 12:00:00 AM
Firstpage
687
Lastpage
690
Abstract
In the all-diffused thyristor, the shunt pattern can easily be introduced by photo masking or silk screen techniques. It is known that the emitter shunts of various designs affected the rate of rise of forward blocking voltage, the forward I-V characteristics, the loop effect, the turn-on time, the dynamic forward voltage drop, and the reverse recovery time. This paper will show their relations to several shunt patterns based on experimental results.
Keywords
Aluminum; Cathodes; Etching; Geometry; Helium; Hysteresis; Silicon; Testing; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17058
Filename
1476242
Link To Document