• DocumentCode
    1038970
  • Title

    Geometry of thyristor cathode shunts

  • Author

    Chu, Chang K.

  • Author_Institution
    Westinghouse Electric Corporation, Youngwood, Pa.
  • Volume
    17
  • Issue
    9
  • fYear
    1970
  • fDate
    9/1/1970 12:00:00 AM
  • Firstpage
    687
  • Lastpage
    690
  • Abstract
    In the all-diffused thyristor, the shunt pattern can easily be introduced by photo masking or silk screen techniques. It is known that the emitter shunts of various designs affected the rate of rise of forward blocking voltage, the forward I-V characteristics, the loop effect, the turn-on time, the dynamic forward voltage drop, and the reverse recovery time. This paper will show their relations to several shunt patterns based on experimental results.
  • Keywords
    Aluminum; Cathodes; Etching; Geometry; Helium; Hysteresis; Silicon; Testing; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17058
  • Filename
    1476242