DocumentCode
1039012
Title
Thermal hysteresis in ferrite memory cores
Author
Sacks, Ivan J.
Author_Institution
Cornell Aeronautical Laboratory, Inc., Buffalo, N.Y., USA
Volume
5
Issue
2
fYear
1969
fDate
6/1/1969 12:00:00 AM
Firstpage
125
Lastpage
132
Abstract
The effects of different writing and reading temperatures on the switching voltage waveform, permeability, and flux state of standard nickel-copper-manganese and copper-manganese ferrite memory cores have been investigated over a temperature range of 0 to 70°C. These temperatures are well below the Curie temperatures of the materials being tested. It has been found that writing at a higher temperature than the read temperature leads to increased low temperature voltage switching thresholds, higher low frequency (<40 MHz) permeabilities, lower high frequency (>40 MHz) permeabilities, and flux states almost equal to the equilibrium value for the lower temperature. Read current pulse rise time and duration have been found to have no effect on the increase in threshold with temperature. Externally produced stresses have been used to simulate the effects of temperature changes on the core.
Keywords
Ferrite core memories; Hysteresis; Magnetic thermal effects; Ferrites; Frequency; Hysteresis; Low voltage; Materials testing; Permeability; Read-write memory; Temperature distribution; Threshold voltage; Writing;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1969.1066401
Filename
1066401
Link To Document