A discussion of the design and properties of a high-power transistor for single sideband applications

This paper describes the efforts and results in developing a high-power transistor for single sideband application. Dependence of intermodulation distortion on device characteristics and usage is discussed. Emitter grid, interdigitated, and overlay structures are considered for the design with supporting evidence given for the eventual choice. An improved version of the original design was found necessary to meet the application requirements.