DocumentCode
1039105
Title
Thermal feedback in power semiconductor devices
Author
Müller, Otward ; Pest, Jurgen
Author_Institution
Telecommunication Products Department, Lynchburg, Va.
Volume
17
Issue
9
fYear
1970
fDate
9/1/1970 12:00:00 AM
Firstpage
770
Lastpage
782
Abstract
Thermal feedback (TF) is an important aspect for the thermal management of semiconductor devices and high-power density integrated circuits. Different features of positive and negative TF in transistors are reviewed and summarized for the macroscopic domain. The thermal feedback mechanism is applied to the microscopic domain of noise fluctuations in semiconductor devices. It is argued that TF may be responsible for a major part of 1/
flicker or excess noise. Some experimental evidence is presented which supports this thermal feedback 1/
-noise theory for bipolar and MOS field effect transistors. Device and circuit design rules for the minimization of transmitter noise are given.
flicker or excess noise. Some experimental evidence is presented which supports this thermal feedback 1/
-noise theory for bipolar and MOS field effect transistors. Device and circuit design rules for the minimization of transmitter noise are given.Keywords
1f noise; Circuit noise; Feedback; Fluctuations; Integrated circuit noise; Microscopy; Power semiconductor devices; Semiconductor device noise; Semiconductor devices; Thermal management;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17072
Filename
1476256
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