DocumentCode :
1039105
Title :
Thermal feedback in power semiconductor devices
Author :
Müller, Otward ; Pest, Jurgen
Author_Institution :
Telecommunication Products Department, Lynchburg, Va.
Volume :
17
Issue :
9
fYear :
1970
fDate :
9/1/1970 12:00:00 AM
Firstpage :
770
Lastpage :
782
Abstract :
Thermal feedback (TF) is an important aspect for the thermal management of semiconductor devices and high-power density integrated circuits. Different features of positive and negative TF in transistors are reviewed and summarized for the macroscopic domain. The thermal feedback mechanism is applied to the microscopic domain of noise fluctuations in semiconductor devices. It is argued that TF may be responsible for a major part of 1/ f flicker or excess noise. Some experimental evidence is presented which supports this thermal feedback 1/ f -noise theory for bipolar and MOS field effect transistors. Device and circuit design rules for the minimization of transmitter noise are given.
Keywords :
1f noise; Circuit noise; Feedback; Fluctuations; Integrated circuit noise; Microscopy; Power semiconductor devices; Semiconductor device noise; Semiconductor devices; Thermal management;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17072
Filename :
1476256
Link To Document :
بازگشت