• DocumentCode
    1039105
  • Title

    Thermal feedback in power semiconductor devices

  • Author

    Müller, Otward ; Pest, Jurgen

  • Author_Institution
    Telecommunication Products Department, Lynchburg, Va.
  • Volume
    17
  • Issue
    9
  • fYear
    1970
  • fDate
    9/1/1970 12:00:00 AM
  • Firstpage
    770
  • Lastpage
    782
  • Abstract
    Thermal feedback (TF) is an important aspect for the thermal management of semiconductor devices and high-power density integrated circuits. Different features of positive and negative TF in transistors are reviewed and summarized for the macroscopic domain. The thermal feedback mechanism is applied to the microscopic domain of noise fluctuations in semiconductor devices. It is argued that TF may be responsible for a major part of 1/ f flicker or excess noise. Some experimental evidence is presented which supports this thermal feedback 1/ f -noise theory for bipolar and MOS field effect transistors. Device and circuit design rules for the minimization of transmitter noise are given.
  • Keywords
    1f noise; Circuit noise; Feedback; Fluctuations; Integrated circuit noise; Microscopy; Power semiconductor devices; Semiconductor device noise; Semiconductor devices; Thermal management;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17072
  • Filename
    1476256