Title :
SiO2/Si3N4passivation of high-power rectifiers
Author :
Verderber, Rudolph R. ; Gruber, Gilbert A. ; Ostroski, John W. ; Johnson, Joseph E. ; Tarneja, Krishan S. ; Gillott, David M. ; Coverston, Boyd J.
Author_Institution :
Westinghouse Research Laboratories, Pittsburgh, Pa.
fDate :
9/1/1970 12:00:00 AM
Abstract :
High-power mesa-type rectifiers were passivated with successive layers of SiO2and Si3N4by a low-temperature chemical vapor deposition technique. Reverse I-V characteristics, high-temperature yield, ancl blocking life test results are compared with values obtained with a polyimide coating. The high-temperature performance of the oxide-nitride passivated unit is found to be superior to the polyimide coated units. A strong correlation between the high-temperature leakage current and thermal stability of the device is noted.
Keywords :
Chemical vapor deposition; Coatings; Electric variables; Organic materials; Passivation; Polyimides; Protection; Rectifiers; Semiconductor materials; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17076
