DocumentCode
1039162
Title
RF power transistor metallization failure
Author
Black, James R.
Author_Institution
Central Research Laboratories, Phoenix, Ariz.
Volume
17
Issue
9
fYear
1970
fDate
9/1/1970 12:00:00 AM
Firstpage
800
Lastpage
803
Abstract
RF power transistors employing aluminum metallization can degrade and fail when the aluminum carries high-current densities at elevated temperatures. Two distinct mechanisms promoted by electromigration lead to failure. These are 1) the growth of etch pits filled with aluminum which penetrate and short the emitter-base junctions and 2) a reconstruction of the metallization which increases the electrical resistance reducing the device efficiency.
Keywords
Aluminum; Conductive films; Current density; Degradation; Electromigration; Metallization; Power transistors; Radio frequency; Silicon; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17077
Filename
1476261
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