DocumentCode
1039320
Title
Small-signal model with frequency-independent elements for the avalanche region of a microwave negative-resistance diode
Author
Steinbrecher, Donald H. ; Peterson, Dean F.
Author_Institution
Massachusetts Institute of Technology, Cambridge, Mass.
Volume
17
Issue
10
fYear
1970
fDate
10/1/1970 12:00:00 AM
Firstpage
883
Lastpage
891
Abstract
An experimentally derived four-element incremental model for the avalanche region of a microwave negative-resistance diode and a simplified measuring procedure for determining the element values are presented. The element values depend on bias but not on frequency. The four-element model predicts the same frequency behavior as the theoretically derived Gilden-Hines model when one degree of freedom is eliminated. Comparison with theory predicts a simple low-frequency (1-MHz) indirect measurement of device drift region carrier transit time.
Keywords
Admittance measurement; Circuits; Diodes; Electrical resistance measurement; Frequency measurement; Impedance; Microwave measurements; Microwave theory and techniques; Predictive models; Roentgenium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17091
Filename
1476275
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