Title :
Proposal and demonstration of multi-emitter HBTs
Author :
Imamura, Kousuke ; Takatsu, Masaru ; Mori, Takayoshi ; Bamba, Y. ; Muto, Salvatore ; Yokoyama, Naoki
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
3/3/1994 12:00:00 AM
Abstract :
The authors have designed and tested InGaAs-InAlGaAs multi-emitter HBTs (ME-HBTs). The emitter electrodes of the transistor work as both an emitter and a base depending on their potential. A highly doped emitter layer was used for a low turn-on voltage for the collector current. Using an ME-HBT, the room-temperature operation of AND/NOR gates was tested
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; logic gates; AND/NOR gates; InGaAs-InAlGaAs; base; collector current; emitter electrodes; highly doped emitter layer; low turn-on voltage; multi-emitter HBT; potential; room-temperature operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940263
