Title :
Filamentary injection currents in semi-insulating GaAs
Author :
Bowers, Harold C. ; Barnett, Allen M.
Author_Institution :
Hughes Aircraft Company, Torrance, Calif.
fDate :
11/1/1970 12:00:00 AM
Abstract :
Current filaments have been observed in the post-breakdown region of two-carrier space-charge-limted diodes in silicon and gallium arsenide. An analytical expression for the radial distribution of current in such filaments has been derived using an appropriate model for the total current-electric field problem. This derived expression is solved numerically for semi-insulating GaAs. These analytical results are compared with the experimental observations.
Keywords :
Aerospace electronics; Charge carrier processes; Current density; Equations; Gallium arsenide; Helium; Insulation; P-i-n diodes; PIN photodiodes; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17109
