Title :
Millimetre-wave InP/InGaAs heterojunction bipolar transistors with a subpicosecond extrinsic delay time
Author :
Song, Jong-In ; Hong, Woo-Pyo ; Palmstrom, C.J.
Author_Institution :
Bellcore, Red Bank, NJ
fDate :
3/3/1994 12:00:00 AM
Abstract :
We report the microwave characteristics of InP/InGaAs heterojunction bipolar transistors (HBTs) using a carbon-doped base grown by chemical beam epitaxy (CBE). An extrinsic delay time of 0.856 ps was achieved by nonequilibrium transport in a very thin base layer and extremely small emitter parasitic resistance through the use of silicon δ-doping in the emitter ohmic contact layer. To our knowledge, this is the shortest extrinsic delay time of any bipolar transistors reported. This result indicates the great potential of InP/InGaAs HBTs for applications requiring a very large bandwidth
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 0.856 ps; InP-InGaAs; InP-InGaAs:C,Si; InP/InGaAs HBT; Millimetre-wave InP/InGaAs heterojunction bipolar transistors; carbon-doped base; chemical beam epitaxy; emitter ohmic contact layer; extremely small emitter parasitic resistance; extrinsic delay time; microwave characteristics; nonequilibrium transport; silicon δ-doping; subpicosecond extrinsic delay time; very large bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940293
