Title :
Frequency scaling of IMPATT diodes
Author :
Blum, Fred A. ; Kramer, Norman B.
Author_Institution :
M.I.T. Lincoln Laboratory, Lexington, Mass.
fDate :
11/1/1970 12:00:00 AM
Abstract :
A simple set of frequency scaling laws for the basic characteristics of IMPATT diodes is derived.
Keywords :
Admittance; Charge carrier processes; Electric fields; Equations; Frequency; Laboratories; P-i-n diodes; Scattering; Semiconductor diodes; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17111