Graded pseudomorphic channel AlInP/AlInAs/GaInAs HEMTs with high channel breakdown voltage

Reports effects of the composition grading of the channel on the device characteristics of Al_0.48In_0.52As/Ga_1-xIn_xAs pseudomorphic HEMTs. Systematic studies reveal that the modification of the quantum-well channel by grading the composition considerably changes the channel breakdown (BV_ds) and output conductance (G₀ ) characteristics. HEMTs with graded Ga_1-xIn_xAs channel (from x=0.7 to x=0.6) exhibited significantly improved BV_ds (11V) and g₀ (40 mS/mm) compared with HEMTs with uniform composition (x=0.7) in the channel (BV_ds=4V and g₀=80 mS/mm)