• DocumentCode
    1039514
  • Title

    Effective boundary of channel in quasi-two-dimensional simulation of thin-film semiconductor devices

  • Author

    Barybin, A.A.

  • Author_Institution
    Dept. of Electron-Ion Process. of Solids, St. Petersburg Electrotech. Univ.
  • Volume
    30
  • Issue
    5
  • fYear
    1994
  • fDate
    3/3/1994 12:00:00 AM
  • Firstpage
    451
  • Lastpage
    452
  • Abstract
    An effective boundary between current channels and depletion regions is introduced. The position of this boundary is defined by taking account of the carrier diffusion in the current channel. This gives a correction to the potential determining the depth of depletion without a diffused channel boundary
  • Keywords
    Schottky gate field effect transistors; carrier density; semiconductor device models; thin film transistors; MESFET two dimensional simulation; carrier diffusion; current channels; depletion regions; effective boundary; potential; quasi-two-dimensional simulation; thin-film semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940309
  • Filename
    273237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1039514