Title :
Effective boundary of channel in quasi-two-dimensional simulation of thin-film semiconductor devices
Author_Institution :
Dept. of Electron-Ion Process. of Solids, St. Petersburg Electrotech. Univ.
fDate :
3/3/1994 12:00:00 AM
Abstract :
An effective boundary between current channels and depletion regions is introduced. The position of this boundary is defined by taking account of the carrier diffusion in the current channel. This gives a correction to the potential determining the depth of depletion without a diffused channel boundary
Keywords :
Schottky gate field effect transistors; carrier density; semiconductor device models; thin film transistors; MESFET two dimensional simulation; carrier diffusion; current channels; depletion regions; effective boundary; potential; quasi-two-dimensional simulation; thin-film semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940309
