Dielectric relaxation in Si—SiO2—Cr structures

The dielectric behavior of thermally grown SiO2was examined using Si-SiO2-Cr structures. The relaxation spectrum exhibits a time dependence indicative of diminishing charge-carrier concentration. The relaxation process is characterized by activation energies of 29-32 kcal/mole; this, together with the considerably higher loss measured in specimens contaminated with Na2CO3, suggests sodium as the carrier source.