DocumentCode :
1039543
Title :
1.4- \\mu\\hbox {m} -Pitch 50% Fill-Factor 1T Charge-Modulation Pixel for CMOS Image Sensors
Author :
Tournier, Arnaud ; Roy, F. ; Lu, G.-N. ; Deschamps, B.
Author_Institution :
STMicroelectronics, Crolles
Volume :
29
Issue :
3
fYear :
2008
fDate :
3/1/2008 12:00:00 AM
Firstpage :
221
Lastpage :
223
Abstract :
Ring-gate implementation of single-transistor charge modulation pixel structure obviates the need to employ shallow trench isolation for pixel isolation. This enables achievements of smaller pixel size and/or higher fill factor. It also reduces dark current by minimizing surface component contribution and band-to-band tunneling effect. Characteristics of a ring-gate 1.4-pitch 50% fill-factor pixel are compared with those of a rectangular-gate 2.2-pitch 46% fill-factor pixel, both being in a 0.13- complementary metal-oxide-semiconductor process. The 1.4-pitch ring-gate pixel has an improved conversion gain and a degraded full well capacity (FWC), as can be roughly predicted according to scaling law. It also shows substantial reductions on dark current, temporal noise, and fixed pattern noise. The resulting signal-to-noise ratio outweighs degradation of FWC, which allows a larger dynamic range.
Keywords :
CMOS image sensors; electric charge; electric current; integrated circuit design; integrated circuit noise; tunnelling; CMOS image sensors; band-to-band tunneling effect; complementary metal-oxide-semiconductor process; conversion gain; dark current reduction; degraded full well capacity; fill factor; fixed pattern noise; pixel isolation; ring-gate implementation; scaling law; shallow trench isolation; signal-to-noise ratio; single-transistor charge-modulation pixel structure; size 0.13 mum; temporal noise; Complementary metal–oxide–semiconductor (CMOS) image sensors; Complementary metal–oxide–semiconductor (CMOS) image sensors; dark-current reduction; ring-gate implementation; single-transistor (1T) charge-modulation pixel;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.915290
Filename :
4433188
Link To Document :
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