DocumentCode
1039682
Title
On the calculation of doping profiles from C(V) measurements on two-sided junctions
Author
De Man, H.J.J.
Volume
17
Issue
12
fYear
1970
fDate
12/1/1970 12:00:00 AM
Firstpage
1087
Lastpage
1088
Abstract
It is shown that for a two-sided junction, the doping profile can only be uniquely determined from C(V) measurements if the doping profile is known on one side. Expressions are derived which enable the calculation of the complete doping profile from C(V) measurements and the knowledge of the doping profile on one side.
Keywords
Area measurement; Atomic measurements; Capacitance measurement; Charge carrier density; Doping profiles; Genetic expression; Impurities; Permittivity; Poisson equations; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17131
Filename
1476315
Link To Document