Title :
On the calculation of doping profiles from C(V) measurements on two-sided junctions
fDate :
12/1/1970 12:00:00 AM
Abstract :
It is shown that for a two-sided junction, the doping profile can only be uniquely determined from C(V) measurements if the doping profile is known on one side. Expressions are derived which enable the calculation of the complete doping profile from C(V) measurements and the knowledge of the doping profile on one side.
Keywords :
Area measurement; Atomic measurements; Capacitance measurement; Charge carrier density; Doping profiles; Genetic expression; Impurities; Permittivity; Poisson equations; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17131
