DocumentCode
1039690
Title
Differential drain resistance of field-effect transistors beyond pinch-off: A comparison between theory and experiment
Author
Choong-Ki Kim
Volume
17
Issue
12
fYear
1970
fDate
12/1/1970 12:00:00 AM
Firstpage
1088
Lastpage
1089
Abstract
The theoretical computation of the drain characteristics of junction field-effect transistors reported by Kim and Yang has been compared with the experimental measurements in terms of the differential drain resistance. Good agreement between the theory and experiment has been found.
Keywords
Capacitance measurement; Electrical resistance measurement; Electron mobility; Electrostatics; FETs; Poisson equations; Resistors; Steady-state; Testing; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17132
Filename
1476316
Link To Document