Title :
Stable high-power operation of self-aligned stepped substrate (S 3) AlGaInP visible laser diode with small beam aspect ratio
Author :
Furaya, A. ; Fukushima, Tetsuya ; Kito, Y. ; Anayama, C. ; Sugano, M. ; Sudo, H. ; Kondo, Makoto ; Tanahashi, Toshiyuki
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
3/3/1994 12:00:00 AM
Abstract :
The authors have developed a selfaligned stepped substrate (S3) AlGaInP laser diode with a small beam aspect ratio and stable high-temperature high-output-power operation. The laser had the index-guided laser structure, and was fabricated by only one-step MOVPE. The width of the laser waveguide was decreased to enlarge the beam divergence in the horizontal direction. Also, the strained multiquantum-well active layer was modified to reduce the high temperature operation current by introducing GaInAsP well layers. As a result, the laser had a beam aspect ratio of 1.5 and stable 35 mW operation for more than 1000 h at 50°C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; 1000 h; 35 mW; 50 C; AlGaInP; AlGaInP visible laser diode; GaInAsP well layers; beam divergence; high temperature operation current; horizontal direction; index-guided laser structure; laser waveguide; one-step MOVPE; self-aligned stepped substrate; small beam aspect ratio; stable high-power operation; stable high-temperature high-output-power operation; strained multiquantum-well active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940264
